TRS12N65FB,S1Q

Herst.Teilenummer
TRS12N65FB,S1Q
Hersteller
Toshiba Semiconductor and Storage
Paket/Fall
-
Datenblatt
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Beschreibung
SIC SBD TO-247 V=650 IF=12A
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Hersteller :
Toshiba Semiconductor and Storage
Produktkategorie :
Dioden - Gleichrichter - Arrays
Current - Average Rectified (Io) (per Diode) :
6A (DC)
Current - Reverse Leakage @ Vr :
30 µA @ 650 V
Diode Configuration :
1 Pair Common Cathode
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Through Hole
Operating Temperature - Junction :
175°C
Package / Case :
TO-247-3
Product Status :
Active
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
TO-247
Voltage - DC Reverse (Vr) (Max) :
650 V
Voltage - Forward (Vf) (Max) @ If :
1.6 V @ 6 A
Datenblätter
TRS12N65FB,S1Q

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