WNSC04650T6J

Herst.Teilenummer
WNSC04650T6J
Hersteller
WeEn Semiconductors
Paket/Fall
-
Datenblatt
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Beschreibung
SILICON CARBIDE POWER DIODE
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Hersteller :
WeEn Semiconductors
Produktkategorie :
Dioden - Gleichrichter - Single
Capacitance @ Vr, F :
141pF @ 1V, 1MHz
Current - Average Rectified (Io) :
4A
Current - Reverse Leakage @ Vr :
25 µA @ 650 V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Surface Mount
Operating Temperature - Junction :
175°C (Max)
Package / Case :
4-VSFN Exposed Pad
Product Status :
Active
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
5-DFN (8x8)
Voltage - DC Reverse (Vr) (Max) :
650 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 4 A
Datenblätter
WNSC04650T6J

Herstellerbezogene Produkte

  • WeEn Semiconductors
    THE ESDHD05UF IS DESIGNED TO PRO
  • WeEn Semiconductors
    THE ESDALD05UE2 IS A LOW CAPACIT
  • WeEn Semiconductors
    THE ESDALD05UD4 IS DESIGNED TO P
  • WeEn Semiconductors
    THE ESDALD05UG4 IS A LOW CAPACIT
  • WeEn Semiconductors
    THE ESDALD05UJ2 IS A LOW CAPACIT

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