G3S06510M

Herst.Teilenummer
G3S06510M
Hersteller
Global Power Technology-GPT
Paket/Fall
-
Datenblatt
Download
Beschreibung
SIC SCHOTTKY DIODE 650V 10A 2-PI
Aktie:
Auf Lager

Fordern Sie ein Angebot an (RFQ)

* Email:
* Teilname:
* Menge (Stück):
* Captcha:
loading...
Hersteller :
Global Power Technology-GPT
Produktkategorie :
Dioden - Gleichrichter - Single
Capacitance @ Vr, F :
690pF @ 0V, 1MHz
Current - Average Rectified (Io) :
21A (DC)
Current - Reverse Leakage @ Vr :
50 µA @ 650 V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Through Hole
Operating Temperature - Junction :
-55°C ~ 175°C
Package / Case :
TO-220-2 Full Pack
Product Status :
Active
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
TO-220F
Voltage - DC Reverse (Vr) (Max) :
650 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 10 A
Datenblätter
G3S06510M

Herstellerbezogene Produkte

  • Global Power Technology-GPT
    SIC SCHOTTKY DIODE 650V 4A 3-PIN
  • Global Power Technology-GPT
    SIC SCHOTTKY DIODE 650V 6A 3-PIN
  • Global Power Technology-GPT
    SIC SCHOTTKY DIODE 650V 8A 3-PIN
  • Global Power Technology-GPT
    SIC SCHOTTKY DIODE 650V 12A 3-PI
  • Global Power Technology-GPT
    SIC SCHOTTKY DIODE 1200V 4A 3-PI

Katalogbezogene Produkte

  • Toshiba Semiconductor and Storage
    DIODE SCHOTTKY 30V 1A SFLAT
  • Diodes Incorporated
    DIODE SBR 60V 900MA SOT23-3
  • Micro Commercial Co
    DIODE SCHOTTKY 40V 3A DO214AC
  • Micro Commercial Co
    DIODE SCHOTTKY 100V 3A DO214AC
  • onsemi
    DIODE SCHOTTKY 40V 1A SOD323HE