G5S12010C

Herst.Teilenummer
G5S12010C
Hersteller
Global Power Technology-GPT
Paket/Fall
-
Datenblatt
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Beschreibung
SIC SCHOTTKY DIODE 1200V 10A 2-P
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Hersteller :
Global Power Technology-GPT
Produktkategorie :
Dioden - Gleichrichter - Single
Capacitance @ Vr, F :
825pF @ 0V, 1MHz
Current - Average Rectified (Io) :
34.2A (DC)
Current - Reverse Leakage @ Vr :
50 µA @ 1200 V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 175°C
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status :
Active
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
TO-252
Voltage - DC Reverse (Vr) (Max) :
1200 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 10 A
Datenblätter
G5S12010C

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