G5S12010C
- Herst.Teilenummer
- G5S12010C
- Hersteller
- Global Power Technology-GPT
- Paket/Fall
- -
- Datenblatt
- Download
- Beschreibung
- SIC SCHOTTKY DIODE 1200V 10A 2-P
- Aktie:
- Auf Lager
Fordern Sie ein Angebot an (RFQ)
- * Email:
- * Teilname:
- * Menge (Stück):
- * Captcha:
-
- Hersteller :
- Global Power Technology-GPT
- Produktkategorie :
- Dioden - Gleichrichter - Single
- Capacitance @ Vr, F :
- 825pF @ 0V, 1MHz
- Current - Average Rectified (Io) :
- 34.2A (DC)
- Current - Reverse Leakage @ Vr :
- 50 µA @ 1200 V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- TO-252
- Voltage - DC Reverse (Vr) (Max) :
- 1200 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7 V @ 10 A
- Datenblätter
- G5S12010C