D850N30TXPSA1

Herst.Teilenummer
D850N30TXPSA1
Hersteller
Infineon Technologies
Paket/Fall
-
Datenblatt
Download
Beschreibung
DIODE GEN PURP 3KV 850A
Aktie:
Auf Lager

Fordern Sie ein Angebot an (RFQ)

* Email:
* Teilname:
* Menge (Stück):
* Captcha:
loading...
Hersteller :
Infineon Technologies
Produktkategorie :
Dioden - Gleichrichter - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
850A
Current - Reverse Leakage @ Vr :
50 mA @ 3000 V
Diode Type :
Standard
Mounting Type :
Chassis Mount
Operating Temperature - Junction :
-40°C ~ 160°C
Package / Case :
DO-200AB, B-PUK
Product Status :
Obsolete
Reverse Recovery Time (trr) :
-
Speed :
Standard Recovery >500ns, > 200mA (Io)
Supplier Device Package :
-
Voltage - DC Reverse (Vr) (Max) :
3000 V
Voltage - Forward (Vf) (Max) @ If :
1.28 V @ 850 A
Datenblätter
D850N30TXPSA1

Herstellerbezogene Produkte

Katalogbezogene Produkte

  • Toshiba Semiconductor and Storage
    DIODE SCHOTTKY 30V 1A SFLAT
  • Diodes Incorporated
    DIODE SBR 60V 900MA SOT23-3
  • Micro Commercial Co
    DIODE SCHOTTKY 40V 3A DO214AC
  • Micro Commercial Co
    DIODE SCHOTTKY 100V 3A DO214AC
  • onsemi
    DIODE SCHOTTKY 40V 1A SOD323HE