BYV30JT-600PQ

Herst.Teilenummer
BYV30JT-600PQ
Hersteller
WeEn Semiconductors
Paket/Fall
-
Datenblatt
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Beschreibung
DIODE GEN PURP 600V 30A TO-3P
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Hersteller :
WeEn Semiconductors
Produktkategorie :
Dioden - Gleichrichter - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
30A
Current - Reverse Leakage @ Vr :
10 µA @ 600 V
Diode Type :
Standard
Mounting Type :
Through Hole
Operating Temperature - Junction :
175°C (Max)
Package / Case :
TO-3P-3, SC-65-3
Product Status :
Active
Reverse Recovery Time (trr) :
65 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
TO-3P
Voltage - DC Reverse (Vr) (Max) :
600 V
Voltage - Forward (Vf) (Max) @ If :
1.8 V @ 30 A
Datenblätter
BYV30JT-600PQ

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