BQ4013MA-120

Hersteller :

Rochester Electronics, LLC

Produktkategorie :

Erinnerung

Access Time :

120 ns

Clock Frequency :

-

Memory Format :

NVSRAM

Memory Interface :

Parallel

Memory Size :

1Mb (128K x 8)

Memory Type :

Non-Volatile

Mounting Type :

Through Hole

Operating Temperature :

0°C ~ 70°C (TA)

Package / Case :

32-DIP Module (0.610", 15.49mm)

Product Status :

Obsolete

Supplier Device Package :

32-DIP Module (18.42x42.8)

Technology :

NVSRAM (Non-Volatile SRAM)

Voltage - Supply :

4.75V ~ 5.5V

Write Cycle Time - Word, Page :

120ns