ZXTD1M832TA

Hersteller :

Diodes Incorporated

Produktkategorie :

Transistoren - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

4A

Current - Collector Cutoff (Max) :

25nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2.5A, 2V

Frequency - Transition :

110MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-VDFN Exposed Pad

Power - Max :

1.7W

Product Status :

Obsolete

Supplier Device Package :

8-MLP (3x2)

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 150mA, 4A

Voltage - Collector Emitter Breakdown (Max) :

12V