RN2710,LF

Hersteller :

Toshiba Semiconductor and Storage

Produktkategorie :

Transistoren - Bipolar (BJT) - Arrays, vorgespannt

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA, 5V

Frequency - Transition :

200MHz

Mounting Type :

Surface Mount

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Power - Max :

200mW

Product Status :

Active

Resistor - Base (R1) :

4.7kOhms

Resistor - Emitter Base (R2) :

-

Supplier Device Package :

USV

Transistor Type :

2 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50V