BFR182E-6327

Herst.Teilenummer
BFR182E-6327
Hersteller
Rochester Electronics, LLC
Paket/Fall
-
Datenblatt
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Beschreibung
RF N-CHANNEL MOSFET
Aktie:
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Hersteller :
Rochester Electronics, LLC
Produktkategorie :
Transistoren - Bipolar (BJT) - HF
Current - Collector (Ic) (Max) :
35mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 10mA, 8V
Frequency - Transition :
8GHz
Gain :
9.5dB
Mounting Type :
Surface Mount
Noise Figure (dB Typ @ f) :
1.3dB @ 1.8GHz
Operating Temperature :
150°C (TJ)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power - Max :
250mW
Product Status :
Active
Supplier Device Package :
SOT-23
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
12V
Datenblätter
BFR182E-6327

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