2SA1052MDTR-E

Hersteller :

Rochester Electronics, LLC

Produktkategorie :

Transistoren - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 2mA, 12V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

150 mW

Product Status :

Active

Supplier Device Package :

3-MPAK

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

200mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

30 V