2SA1179N6-CPA-TB-E

Hersteller :

onsemi

Produktkategorie :

Transistoren - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

150 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA, 6V

Frequency - Transition :

180MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

200 mW

Product Status :

Obsolete

Supplier Device Package :

-

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50 V