SIA778DJ-T1-GE3

Herst.Teilenummer
SIA778DJ-T1-GE3
Hersteller
Vishay Siliconix
Paket/Fall
-
Datenblatt
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Beschreibung
MOSFET 2N-CH 12V/20V SC70-6
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Hersteller :
Vishay Siliconix
Produktkategorie :
Transistoren - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
4.5A, 1.5A
Drain to Source Voltage (Vdss) :
12V, 20V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds :
500pF @ 6V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
PowerPAK® SC-70-6 Dual
Power - Max :
6.5W, 5W
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
29mOhm @ 5A, 4.5V
Supplier Device Package :
PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id :
1V @ 250µA
Datenblätter
SIA778DJ-T1-GE3

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