HUF76113DK8T

Herst.Teilenummer
HUF76113DK8T
Hersteller
Rochester Electronics, LLC
Paket/Fall
-
Datenblatt
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Beschreibung
N-CHANNEL POWER MOSFET
Aktie:
Auf Lager

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Hersteller :
Rochester Electronics, LLC
Produktkategorie :
Transistoren - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
6A (Ta)
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
19.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
605pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-VFSOP (0.091", 2.30mm Width)
Power - Max :
2.5W (Ta)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
32mOhm @ 6A, 10V
Supplier Device Package :
US8
Vgs(th) (Max) @ Id :
3V @ 250µA
Datenblätter
HUF76113DK8T

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