G33N03D3

Herst.Teilenummer
G33N03D3
Hersteller
Goford Semiconductor
Paket/Fall
-
Datenblatt
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Beschreibung
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
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Hersteller :
Goford Semiconductor
Produktkategorie :
Transistoren - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
33A (Tc)
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Standard
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1938pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerVDFN
Power - Max :
20W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
12mOhm @ 18A, 10V
Supplier Device Package :
8-DFN (3x3)
Vgs(th) (Max) @ Id :
1.1V @ 250µA
Datenblätter
G33N03D3

Herstellerbezogene Produkte

  • Goford Semiconductor
    N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
  • Goford Semiconductor
    N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
  • Goford Semiconductor
    N60V,RD(MAX)<30M@10V,RD(MAX)<40M
  • Goford Semiconductor
    N/P60V,RD(MAX)<35M@10V,RD(MAX)<4
  • Goford Semiconductor
    N40V,RD(MAX)<7M@10V,RD(MAX)<12M@

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  • Rohm Semiconductor
    QH8K22 IS LOW ON - RESISTANCE MO
  • Rohm Semiconductor
    SH8KA1 IS A POWER TRANSISTOR WIT
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