DN2625DK6-G

Herst.Teilenummer
DN2625DK6-G
Hersteller
Microchip Technology
Paket/Fall
-
Datenblatt
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Beschreibung
MOSFET 2N-CH 250V 1.1A 8VDFN
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Hersteller :
Microchip Technology
Produktkategorie :
Transistoren - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
1.1A
Drain to Source Voltage (Vdss) :
250V
FET Feature :
Depletion Mode
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
7.04nC @ 1.5V
Input Capacitance (Ciss) (Max) @ Vds :
1000pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-VDFN Exposed Pad
Power - Max :
-
Product Status :
Active
Rds On (Max) @ Id, Vgs :
3.5Ohm @ 1A, 0V
Supplier Device Package :
8-DFN (5x5)
Vgs(th) (Max) @ Id :
-
Datenblätter
DN2625DK6-G

Herstellerbezogene Produkte

  • Microchip Technology
    SI CAPACITOR NON HERMETIC CHIP
  • Microchip Technology
    SI CAPACITOR NON HERMETIC CHIP
  • Microchip Technology
    SI CAPACITOR NON HERMETIC CHIP
  • Microchip Technology
    SI CAPACITOR NON HERMETIC CHIP
  • Microchip Technology
    SI CAPACITOR NON HERMETIC CHIP

Katalogbezogene Produkte

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    DUAL N-CHANNEL MOSFET,SOT23-6L
  • Nexperia USA Inc.
    MOSFET 2P-CH 20V 0.5A 6DFN
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  • Rohm Semiconductor
    QH8K22 IS LOW ON - RESISTANCE MO
  • Rohm Semiconductor
    SH8KA1 IS A POWER TRANSISTOR WIT