IPL60R104C7AUMA1

Herst.Teilenummer
IPL60R104C7AUMA1
Hersteller
Infineon Technologies
Paket/Fall
-
Datenblatt
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Beschreibung
MOSFET N-CH 600V 20A 4VSON
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Hersteller :
Infineon Technologies
Produktkategorie :
Transistoren - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
20A (Tc)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1819 pF @ 400 V
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
4-PowerTSFN
Power Dissipation (Max) :
122W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
104mOhm @ 9.7A, 10V
Supplier Device Package :
PG-VSON-4
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 490µA
Datenblätter
IPL60R104C7AUMA1

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