HIP6601BECB

Herst.Teilenummer
HIP6601BECB
Hersteller
Renesas Electronics America Inc
Paket/Fall
-
Datenblatt
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Beschreibung
IC GATE DRVR HALF-BRIDGE 8SOIC
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Hersteller :
Renesas Electronics America Inc
Produktkategorie :
PMIC - Gate-Treiber
Channel Type :
Synchronous
Current - Peak Output (Source, Sink) :
-
Driven Configuration :
Half-Bridge
Gate Type :
N-Channel MOSFET
High Side Voltage - Max (Bootstrap) :
15 V
Input Type :
Non-Inverting
Logic Voltage - VIL, VIH :
-
Mounting Type :
Surface Mount
Number of Drivers :
2
Operating Temperature :
0°C ~ 125°C (TJ)
Package / Case :
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Product Status :
Obsolete
Rise / Fall Time (Typ) :
20ns, 20ns
Supplier Device Package :
8-SOIC-EP
Voltage - Supply :
10.8V ~ 13.2V
Datenblätter
HIP6601BECB

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