5LN01SS-TL-E

Herst.Teilenummer
5LN01SS-TL-E
Hersteller
Rochester Electronics, LLC
Paket/Fall
-
Datenblatt
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Beschreibung
N-CHANNEL SILICON MOSFET
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Auf Lager

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Hersteller :
Rochester Electronics, LLC
Produktkategorie :
Transistoren - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
100mA (Ta)
Drain to Source Voltage (Vdss) :
50 V
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
6600 pF @ 10 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
SC-81
Power Dissipation (Max) :
150mW (Ta)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
7.8Ohm @ 50mA, 4V
Supplier Device Package :
3-SSFP
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±10V
Vgs(th) (Max) @ Id :
-
Datenblätter
5LN01SS-TL-E

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