NP160N055TUJ-E1-AY

Hersteller :

Rochester Electronics, LLC

Produktkategorie :

Transistoren - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

160A (Tc)

Drain to Source Voltage (Vdss) :

55 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

180 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

10350 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

-

Power Dissipation (Max) :

1.8W (Ta), 250W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

3mOhm @ 80A, 10V

Supplier Device Package :

TO-263-7

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA