SQ2325ES-T1_GE3

Hersteller :

Vishay Siliconix

Produktkategorie :

Transistoren - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

840mA (Tc)

Drain to Source Voltage (Vdss) :

150 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

10 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

250 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TA)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

3W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.77Ohm @ 500mA, 10V

Supplier Device Package :

SOT-23-3 (TO-236)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA