TK12V60W,LVQ

Hersteller :

Toshiba Semiconductor and Storage

Produktkategorie :

Transistoren - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11.5A (Ta)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

Super Junction

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

890 pF @ 300 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

4-VSFN Exposed Pad

Power Dissipation (Max) :

104W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

300mOhm @ 5.8A, 10V

Supplier Device Package :

4-DFN-EP (8x8)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3.7V @ 600µA