NGB8207ABNT4G

Herst.Teilenummer
NGB8207ABNT4G
Hersteller
Rochester Electronics, LLC
Paket/Fall
-
Datenblatt
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Beschreibung
INSULATED GATE BIPOLAR TRANSISTO
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Hersteller :
Rochester Electronics, LLC
Produktkategorie :
Transistoren - IGBTs - Single
Current - Collector (Ic) (Max) :
20 A
Current - Collector Pulsed (Icm) :
50 A
Gate Charge :
-
IGBT Type :
-
Input Type :
Logic
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max :
165 W
Product Status :
Active
Reverse Recovery Time (trr) :
-
Supplier Device Package :
D²PAK
Switching Energy :
-
Td (on/off) @ 25°C :
-
Test Condition :
-
Vce(on) (Max) @ Vge, Ic :
2.2V @ 3.7V, 10A
Voltage - Collector Emitter Breakdown (Max) :
365 V
Datenblätter
NGB8207ABNT4G

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