WG50N65DHWQ

Herst.Teilenummer
WG50N65DHWQ
Hersteller
WeEn Semiconductors
Paket/Fall
-
Datenblatt
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Beschreibung
IGBT TRENCH FD ST 650V 91A TO247
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Hersteller :
WeEn Semiconductors
Produktkategorie :
Transistoren - IGBTs - Single
Current - Collector (Ic) (Max) :
91 A
Current - Collector Pulsed (Icm) :
200 A
Gate Charge :
160 nC
IGBT Type :
Trench Field Stop
Input Type :
Standard
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-247-3
Power - Max :
278 W
Product Status :
Active
Reverse Recovery Time (trr) :
105 ns
Supplier Device Package :
TO-247-3
Switching Energy :
1.7mJ (on), 600µJ (off)
Td (on/off) @ 25°C :
66ns/163ns
Test Condition :
400V, 50A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max) :
650 V
Datenblätter
WG50N65DHWQ

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