BFP196WE6327

Herst.Teilenummer
BFP196WE6327
Hersteller
Rochester Electronics, LLC
Paket/Fall
-
Datenblatt
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Beschreibung
RF TRANSISTOR, L BAND, NPN
Aktie:
Auf Lager

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Hersteller :
Rochester Electronics, LLC
Produktkategorie :
Transistoren - Bipolar (BJT) - HF
Current - Collector (Ic) (Max) :
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 50mA, 8V
Frequency - Transition :
7.5GHz
Gain :
12.5dB ~ 19dB
Mounting Type :
Surface Mount
Noise Figure (dB Typ @ f) :
1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Operating Temperature :
150°C (TJ)
Package / Case :
SC-82A, SOT-343
Power - Max :
700mW
Product Status :
Active
Supplier Device Package :
PG-SOT343-4
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
12V
Datenblätter
BFP196WE6327

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