HUF75823D3S

Herst.Teilenummer
HUF75823D3S
Hersteller
Rochester Electronics, LLC
Paket/Fall
-
Datenblatt
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Beschreibung
N-CHANNEL POWER MOSFET
Aktie:
Auf Lager

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Hersteller :
Rochester Electronics, LLC
Produktkategorie :
Transistoren - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
14A (Tc)
Drain to Source Voltage (Vdss) :
150 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
54 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds :
800 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
85W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
150mOhm @ 14A, 10V
Supplier Device Package :
TO-252, (D-Pak)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datenblätter
HUF75823D3S

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