GC11N65F

Herst.Teilenummer
GC11N65F
Hersteller
Goford Semiconductor
Paket/Fall
-
Datenblatt
Download
Beschreibung
N650V,RD(MAX)<360M@10V,VTH2.5V~4
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Hersteller :
Goford Semiconductor
Produktkategorie :
Transistoren - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
-
Drain to Source Voltage (Vdss) :
-
Drive Voltage (Max Rds On, Min Rds On) :
-
FET Feature :
-
FET Type :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
-
Operating Temperature :
-
Package / Case :
-
Power Dissipation (Max) :
-
Product Status :
Active
Rds On (Max) @ Id, Vgs :
-
Supplier Device Package :
-
Technology :
-
Vgs (Max) :
-
Vgs(th) (Max) @ Id :
-
Datenblätter
GC11N65F

Herstellerbezogene Produkte

  • Goford Semiconductor
    N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
  • Goford Semiconductor
    N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
  • Goford Semiconductor
    N60V,RD(MAX)<30M@10V,RD(MAX)<40M
  • Goford Semiconductor
    N30V,RD(MAX)<12M@10V,RD(MAX)<13M
  • Goford Semiconductor
    N/P60V,RD(MAX)<35M@10V,RD(MAX)<4

Katalogbezogene Produkte