VS-GT100TP60N

Hersteller :

Vishay General Semiconductor - Diodes Division

Produktkategorie :

Transistoren - IGBTs - Module

Configuration :

Half Bridge

Current - Collector (Ic) (Max) :

160 A

Current - Collector Cutoff (Max) :

5 mA

IGBT Type :

Trench

Input :

Standard

Input Capacitance (Cies) @ Vce :

7.71 nF @ 30 V

Mounting Type :

Chassis Mount

NTC Thermistor :

No

Operating Temperature :

175°C (TJ)

Package / Case :

INT-A-PAK (3 + 4)

Power - Max :

417 W

Product Status :

Active

Supplier Device Package :

INT-A-Pak

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 100A

Voltage - Collector Emitter Breakdown (Max) :

600 V