BSM35GB120DN2HOSA1

Hersteller :

Rochester Electronics, LLC

Produktkategorie :

Transistoren - IGBTs - Module

Configuration :

Half Bridge

Current - Collector (Ic) (Max) :

50 A

Current - Collector Cutoff (Max) :

1 mA

IGBT Type :

-

Input :

Standard

Input Capacitance (Cies) @ Vce :

2 nF @ 25 V

Mounting Type :

Chassis Mount

NTC Thermistor :

No

Operating Temperature :

150°C (TJ)

Package / Case :

Module

Power - Max :

280 W

Product Status :

Last Time Buy

Supplier Device Package :

Module

Vce(on) (Max) @ Vge, Ic :

3.2V @ 15V, 35A

Voltage - Collector Emitter Breakdown (Max) :

1200 V