APTGT35H120T3G

Herst.Teilenummer
APTGT35H120T3G
Hersteller
Microchip Technology
Paket/Fall
-
Datenblatt
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Beschreibung
IGBT MODULE 1200V 55A 208W SP3
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Hersteller :
Microchip Technology
Produktkategorie :
Transistoren - IGBTs - Module
Configuration :
Full Bridge Inverter
Current - Collector (Ic) (Max) :
55 A
Current - Collector Cutoff (Max) :
250 µA
IGBT Type :
Trench Field Stop
Input :
Standard
Input Capacitance (Cies) @ Vce :
2.5 nF @ 25 V
Mounting Type :
Chassis Mount
NTC Thermistor :
Yes
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
SP3
Power - Max :
208 W
Product Status :
Active
Supplier Device Package :
SP3
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max) :
1200 V
Datenblätter
APTGT35H120T3G

Herstellerbezogene Produkte

  • Microchip Technology
    SI CAPACITOR NON HERMETIC CHIP
  • Microchip Technology
    SI CAPACITOR NON HERMETIC CHIP
  • Microchip Technology
    SI CAPACITOR NON HERMETIC CHIP
  • Microchip Technology
    SI CAPACITOR NON HERMETIC CHIP
  • Microchip Technology
    SI CAPACITOR NON HERMETIC CHIP

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