
FD-DF80R12W1H3_B52
- Herst.Teilenummer
- FD-DF80R12W1H3_B52
- Hersteller
- Infineon Technologies
- Paket/Fall
- -
- Datenblatt
- Download
- Beschreibung
- IGBT MOD 1200V 40A 215W
- Aktie:
- Auf Lager
Fordern Sie ein Angebot an (RFQ)
- * Email:
- * Teilname:
- * Menge (Stück):
- * Captcha:
-
- Hersteller :
- Infineon Technologies
- Produktkategorie :
- Transistoren - IGBTs - Module
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 40 A
- Current - Collector Cutoff (Max) :
- 1 mA
- IGBT Type :
- Trench Field Stop
- Input :
- Standard
- Input Capacitance (Cies) @ Vce :
- 235 nF @ 25 V
- Mounting Type :
- Chassis Mount
- NTC Thermistor :
- Yes
- Operating Temperature :
- -40°C ~ 125°C
- Package / Case :
- Module
- Power - Max :
- 215 W
- Product Status :
- Active
- Supplier Device Package :
- Module
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 40A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200 V
- Datenblätter
- FD-DF80R12W1H3_B52